Product Summary

The G3N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device G3N60C3D has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.

Parametrics

G3N60C3D absolute maximum ratings: (1)Collector-Emitter Voltage, BVCES: 600 V; (2)Collector Current Continuous, IC25: 6A; (3)Collector Current Pulsed, ICM: 24 A; (4)Gate-Emitter Voltage Continuous, VGES: ±20 V; (5)Gate-Emitter Voltage Pulsed, VGEM: ±30 V; (6)Switching Safe Operating Area: 18A at 480V; (7)Power Dissipation Total at TC = 25℃, PD: 33 W; (8)Power Dissipation Derating TC > 25℃: 0.27 W/℃; (9)Operating and Storage Junction Temperature Range, TJ, TSTG: -40 to 150℃; (10)Maximum Lead Temperature for Soldering, TL: 260℃; (11)Short Circuit Withstand Time, tSC: 8 μs.

Features

G3N60C3D features: (1)6A, 600V at TC = 25℃; (2)600V Switching SOA Capability; (3)Typical Fall Time: 130ns at TJ = 150℃; (4)Short Circuit Rating; (5)Low Conduction Loss; (6)Hyperfast Anti-Parallel Diode.

Diagrams

G3N60C3D diagram