Product Summary

The BFW16A is a multi emitter silicon planar epitaxial NPN transisitor in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. It is primarily intended for final and driver stages in channel and band aerial amplifiers with high output power from 40 to 860 MHZ.

Parametrics

BFW16A absolute maximum mratings: (1)collector base voltage: 40V; (2)collector emitter voltage: 40V; (3)emitter base voltage: 3V; (4)collector current: 150mA; (5)collector peak current: 300mA; (6)total power dissipation: 0.7W; (7)storage and junction temperature: -65 to 200℃.

Features

BFW16A features: (1)Collector cutoff current: 20μA; (2)Emitter base breakdown voltage: 3V; (3)collector emitter knee voltage: 0.75V; (4)collector base capacltance: 4pF; (5)reverse capacitance: 1.7pF; (6)Noise figue: 6dB.

Diagrams

BFW16A diagram

BFW15M0JF08
BFW15M0JF08
Vishay/Dale
Carbon Film Resistors - Through Hole 15Mohms 5% Radial lugs
Data Sheet
0-1: $97.50
1-2: $82.50