(China (Mainland))
Product Summary
The 4AK16 is a 4V Silicon N-Channel Power MOS FET Array. The application of it is High speed power switching.
Parametrics
4AK16 absolute maximum ratings: (1)Drain to source voltage:60 V; (2)Gate to source voltage:±20 V; (3)Drain current:5A; (4)Drain peak current:20 A; (5)Body to drain diode reverse drain current:5A; (6)Channel dissipation (Tc = 25℃):28 W; (7)Channel dissipation:4W; (8)Channel temperature:150℃; (9)Storage temperature:–55 to +150℃.
Features
4AK16 features: (1)Low on-resistance:RDS(on) ≤ 0.18, VGS = 10 V, ID = 5 A, RDS(on)≤ 0.25, VGS = 4 V, ID = 5 A; (2)Capable of 4 V gate drive; (3)Low drive current; (4)High speed switching; (5)High density mounting; (6)Suitable for motor driver, solenoid driver and lamp driver.
Diagrams
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 4AK16 |
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4AK15 |
Other |
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4AK16 |
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4AK17 |
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4AK19 |
Other |
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Negotiable |
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4AK18 |
Other |
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Negotiable |
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